We perform an experimental and computational study of the effects of external stress and intermixing on single site-selected InAs/InP quantum dots in a highly...
Optics Express, Optical Society of America, 22 janvier 2018, Volume : 26, Numéro : 2
We have developed an InAs/InP quantum dot (QD) C-band coherent comb laser (CCL) module with actively stabilized absolute wavelength and power, and channel...
This letter introduces a semiconductor-under-insulator (SUI) technology in InP for designing strip waveguides that interfaceInPphotonic crystal membrane...
Nanotechnology, 5 septembre 2012, Volume : 23, Numéro : 38
The interplay between crystal phase purity and radial growth in InP nanowires is investigated. By modifying the growth rate and V/III ratio, regions of high or...
ACS Photonics, American Chemical Society, 30 mai 2019, Volume : 6, Numéro : 7
Generation of photon pairs from quantum dots with near-unity entanglement fidelity has been a long-standing scientific challenge. It is generally thought that...
We demonstrate the selective optical excitation and detection of subsets of quantum dots (QDs) within an InAs/InP ensemble using a SiO2/Ta 2O5-based optical...
Linewidth enhancement factor (LEF) of InAs/InP quantum dot (QD) multi-wavelength lasers (MWLs) emitting around 1.5 μm is investigated both above and below the...
International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, Society of Photo-optical Instrumentation Engineers, 4 août 2009
This paper presents our research and development efforts in realizing and perfecting organic/inorganic photon upconversion devices for wavelengths from near...
Physical Review B, American Physical Society, 25 mai 2016, Volume : 93, Numéro : 19
One of the key challenges in developing quantum networks is to generate single photons with high brightness, purity, and long temporal coherence. Semiconductor...
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