https://publications-cnrc.canada.ca/fra/voir/objet/?id=2a0a1fc7-cb0f-4982-a02d-f92151698f9b
Rechercher Poole, P. J; Rechercher Charbonneau, S; Rechercher Aers, G. C; Rechercher Jackman, T.E; Rechercher Buchanan, M; Rechercher Dion, M; Rechercher Goldberg, R. D; Rechercher Mitchell, I. V
Journal of Applied Physics, AIP, 1 mai 1995, Volume : 78, Numéro : 4
InGaAs/GaAs/AlGaAs and InGaAs/InGaAsP/InP laser structures, with InGaAs quantum wells approximately 1.85 μm beneath the surface, were implanted with ions...
Article de périodique (revue)