https://publications-cnrc.canada.ca/fra/voir/objet/?id=37adc162-dbd3-4e75-94e3-5cfb8e6d84ec
Applied Physics Letters, 15 janvier 1990, Volume : 56, Numéro : January 3
Temperature-dependent photoluminescence (PL) measurements have been used to characterize 5-μm-thick Si(100) epitaxial layers doped in situ during molecular...
Article de périodique (revue)