Physica B: Physics of Condensed Matter, 1990, Volume : 165-166, Numéro : PART 1
Superfluid 3He film flow out of a copper beaker was measured without and then with a 4He coating on the copper surface. The effect of the 4 He was to convert...
Solid State Communications, 1991, Volume : 78, Numéro : 3
Tilted magnetic field activation measurements have been made at the 5 3, 4 3 and 7 5 filling factors. Measurements are presented as a function of carrier...
Physica B: Physics of Condensed Matter, 1 mars 1991, Volume : 175, Numéro : 1-Mar
We report magnetoresistance measurements on staggered quantum contacts in series. The enhanced conductance reveals interesting effects associated with the...
Journal of Vacuum Science & Technology. B, mai 1996, Volume : 14, Numéro : 3
GaAs/GaAlAs based two-dimensional electron gas structures, with peak mobilities up to 6.4 million (cm2/V s), have been grown in a V80H molecular beam epitaxy...
Shubnikov-de Haas oscillations have been studied, at low temperatures, in a high-mobility quantum-Hall-effect sample. A linear increase with increasing...
The use of surface gates to define submicrometer-size dots incorporating quantum point contacts (QPC's) is proving profitable in investigating a number of...
1996 Conference on Optoelectronic and Microelectronic Materials and Devices: Proceedings, Institute of Electrical and Electronics Engineers, décembre 1996
A brief survey is given of ways SiGe alloys can be integrated into microelectronic devices. The growth of a series of modulation doped p-type strained...
Fractional quantum-Hall-effect features around filling factor ν=½ have been analyzed using the composite-fermion approach. Effective masses deduced from the...
Superlattices and Microstructures, 1992, Volume : 11, Numéro : 2
We report low field magnetoresistance measurements of two QPC systems. For a staggered pair of QPCs were separate the ballistic and non-ballistic contributions...
Quantum Transport in Ultrasmall Devices: Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, Plenum Press, 1995
One of the most common procedures employed in the fabrication of semiconductor nanostructures is the split-gate technique, first developed by (1986). Submicron...
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