SiGe quantum wells were grown at 525 °C using a commercially available, ultrahigh vacuum–chemical vapor deposition system, in which the purity of the material...
Materials issues in novel Si-based technology: symposium held November 26-28, Cambridge University Press, 2002
High-quality short-period Si/SiGe strained-layer superlattices have been grown on bulk single-crystal SiGe substrates using a commercial low-temperature...
Journal of Applied Physics, 1 mai 1995, Volume : 77, Numéro : May 9
Temperature-dependent photoluminescence (PL) measurements have been used to characterize 5-μm-thick Si(001) layers doped with low-energy 11B+ ions (EB+=100,...
We use a novel wafer bending technique to study band alignment under applied uniaxial stress in Si₁₋yCy/Si and Si₁₋xGex/Si₁₋yCy/Si heterostructures. We confirm...