https://publications-cnrc.canada.ca/fra/voir/objet/?id=5087bddd-31b7-4a40-8078-f4414d256019
Applied Physics Letters, 3 juin 1996, Volume : 68, Numéro : 23
The transient reflectivity response of GaAs with a 2% excess As concentration (GaAs:As), prepared by As+ ion implantation, has been measured at photon energies...
Article de périodique (revue)