Engineering Science Reference, 2010, ISBN : 1615206507
"This book proposes an integration of classical compiler techniques, metamodeling techniques and algebraic specification techniques to make a significant...
ECS Journal of Solid State Science and Technology, The Electrochemical Society, 28 juillet 2018, Volume : 7, Numéro : 8
Both Si and Ge possess indirect band gaps, which makes them very inefficient light emitters. One way to overcome this limitationis through bandgap engineering....
Selective growth and self-organization of silicon-germanium (SiGe) nanowires (NWs) on focused ion beam (FIB) patterned Si(111) substrates is reported. In its...
Beilstein journal of nanotechnology, 30 décembre 2014
We report on the optical properties of SiGe nanowires (NWs) grown by molecular beam epitaxy (MBE) in ordered arrays on SiO2/ Si(111) substrates. The production...
Under the proviso that the existing tight-binding (TB) and effective mass (EM) theoretical models provide a good description of the Ge dot energy gap versus...
Self-assembled Ge nanodots were formed by in-situ thermal annealing of a thin amorphous Ge layer deposited by molecular beam epitaxy on a thin SiO₂ or TiO₂...
Self-assembled Ge quantum dots were formed by in-situ thermal annealing of a thin amorphous Ge layer deposited by molecular beam epitaxy on a thin porous TiO 2...