https://publications-cnrc.canada.ca/fra/voir/objet/?id=97592b18-9f89-4a6a-a76a-a99d8a8393ec
Rechercher Walker, A. W; Rechercher Pitts, O. J; Rechercher Storey, C; Rechercher Waldron, P; Rechercher Flueraru, C
Optical and Quantum Electronics, Springer Nature Switzerland AG, 29 janvier 2020, Volume : 52, Numéro : 2
InGaAs/InP double-heterostructure P–i–N diodes of various junction areas are characterized at room temperature and modeled using TCAD. Biasing the guard ring...
Article de périodique (revue)