https://catalogue-scientifique.canada.ca/record=2172772~S6*frc
Rechercher Ryu, Sei-Hyung; Rechercher Krishnaswami, Sumi; Rechercher Hull, Brett; Rechercher Heath, Bradley; Rechercher Husna, Fatima; Rechercher Richmond, James; Rechercher Agarwal, Anant; Rechercher Palmour, John; Rechercher Scofield, James
cree research inc durham nc, 2006
High temperature characteristics of 4H-SiC power JFETs and DMOSFETs are presented in this paper. Both devices are based on pn junctions in 4H-SiC, and are...
Publication gouvernementale