https://publications-cnrc.canada.ca/fra/voir/objet/?id=2c06274e-a252-400b-9d95-5c37a4efb622
Surface Science, 20 juillet 1996, Volume : 361-362
Threshold conduction was studied in Si MOSFET samples with mobility ranging from 5000 to 55 000 cm2/V · s, and in the wide temperature range 20 mK-4 K. We...
Article de périodique (revue)