https://catalogue-scientifique.canada.ca/record=2270844~S6*frc
Rechercher Sundaresan, Siddarth G; Rechercher Tian, Yong-lai; Rechercher Ridgway, Mark C; Rechercher Mahadik, Nadeemullah A; Rechercher Qadri, Syed B; Rechercher Rao, Mulpuri V
george mason univ fairfax va dept of electrical and computer engineering, 2007
Solid-state microwave annealing was performed at temperatures up to 2120 deg C for 30 s on ion-implanted 4H SiC in N2 ambient. The surface roughness in the...
Publication gouvernementale