https://publications-cnrc.canada.ca/fra/voir/objet/?id=d093a160-588e-4229-ba9a-50d1821f5d6a
Rechercher Yang, Y; Rechercher Liu, H.C; Rechercher Shen, W.Z; Rechercher Gupta, J.A; Rechercher Luo, H; Rechercher Buchanan, M; Rechercher Wasilewski, Z.R
Electronics Letters, 2011, Volume : 47, Numéro : 6
Reported for the first time is a full GaAs-based room-temperature near-infrared (NIR) up-conversion device fabricated by wafer-fusing a GaNAsSb/GaAs pin...
Article de périodique (revue)