We have developed a model which integrates calculation of InAlGaAs multiple quantum well (MQW) transition energies using the envelope function approximation...
We investigate the materials properties and dark currents of planar InP/InGaAs avalanche photodiodes (APDs) in which the p-dopant, Zn, is introduced by...
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2011
We have grown, fabricated, and tested single mode ridge-waveguide distributed feedback lasers utilising InAs/InP quantum dots as the gain medium. The growth of...
2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference, 2011
Single-mode InAs/InP quantum dot DFB lasers with side-mode suppression ratio greater than 62 dB are demonstrated, operating CW up to 80°C. Relative intensity...
2011 ICO International Conference on Information Photonics, 2011
We report on our most recent results on quantum dot (QD) laser devices around 1550 nm based on InAs/InP QD gain materials. These devices include monolithic QD...
2012 24th International Conference on Indium Phosphide & Related Materials (IPRM), IEEE
We investigated the diffusion of zinc into InP/InGaAs avalanche photodiode structures using dimethylzinc in an MOCVD reactor. Diffusion profiles were measured...
We have studied the breakdown characteristics of a narrow two-dimensional electron gas channel in GaAs/AlGaAs heterostructures over a wide temperature range...
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