https://catalogue-scientifique.canada.ca/record=2113349~S6*frc
Rechercher Hite, J; Rechercher Thaler, G. T; Rechercher Khanna, R; Rechercher Abernathy, C. R; Rechercher Pearton, S. J; Rechercher Park, J. H; Rechercher Steckl, A. J; Rechercher Zavada, J. M
florida univ gainesville dept of materials science and engineering, 2006
GaN films were doped with Eu to a concentration of ̃0.12 at. % during growth at 800 C by molecular beam epitaxy, with the Eu cell temperature held constant at...
Publication gouvernementale