https://catalogue-scientifique.canada.ca/record=2305787~S6*frc
Rechercher Wu, J; Rechercher Hu, J; Rechercher Zhao, J. H; Rechercher Wang, X; Rechercher Li, X; Rechercher Fursin, L; Rechercher Burke, T
tacom research development and engineering center warren mi, 2007
A normally-off 4H-SiC trenched gate MOSFET structure with epitaxial buried channel, coupled with improved fabrication processes has resulted in substantially...
Publication gouvernementale