https://publications-cnrc.canada.ca/fra/voir/objet/?id=7e66e906-0f04-40f3-92fc-04c3d1b5522d
Electron Devices Meeting, 2008
We report a new charge-trap-engineered flash non-volatile memory that has combined 5 nm Si3N4 and 0.9 nm EOT HfON trapping layers, within double-barrier and...
Article de périodique (revue)
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