https://publications-cnrc.canada.ca/fra/voir/objet/?id=2707f7f9-46a2-44a8-9e58-6abbd8c24109
Rechercher Webb, James B; Rechercher Tang, H; Rechercher Bardwell, J. A; Rechercher Moisa, S; Rechercher Peters, C; Rechercher MacElwee, T
Journal of Crystal Growth, 25 juillet 2001, Volume : 230, Numéro : 3-4
The quality of GaN epilayers grown by molecular beam epitaxy on substrates such as sapphire and silicon carbide has improved considerably over the past few...
Article de périodique (revue)