The magnetoresistance associated with quantum interference corrections in a high mobility, gated InxGa1−sAs/InP quantum well structure is studied as a function...
Magnetotransport coefficients have been measured, at temperatures down to 30 mK, in a single-side p-doped Si0.₈₈Ge0.₁₂ strained quantum well. Odd filling...
Physica Status Solidi B: Basic Solid State Physics, Wiley, 2002, Volume : 234, Numéro : 3
The growth of high quality GaN/AlGaN two-dimensional electron gas on MOCVD GaN template substrates by ammonia-MBE is reported. The homoepitaxial growth...
Physica E: Low-Dimensional Systems and Nanostructures, 2000, Volume : 6, Numéro : 1-4
Magnetoresistance measurements are presented for a strained p-SiGe quantum well sample where the density is varied through the B=0 metal–insulator transition....