Journal of Magnetism and Magnetic Materials, mai 2001, Volume : 226-230, Numéro : Part 1
Between 42 and 50 K, UNiGe exhibits an incommensurate phase (IP) with with a δ that is slightly larger than in zero field. We have studied the field dependence...
Materials Chemistry and Physics, 28 septembre 2003, Volume : 82, Numéro : 1
A two-step epitaxial lateral overgrowth (ELO) method was proposed to improve the quality of GaN-based epitaxial layers. In the first step, we grew a...
Physica Status Solidi B: Basic Solid State Physics, Wiley, 2002, Volume : 234, Numéro : 3
The growth of high quality GaN/AlGaN two-dimensional electron gas on MOCVD GaN template substrates by ammonia-MBE is reported. The homoepitaxial growth...